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Title:
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Growth And Characterization Of Te-Se System And Some Tei.I.Urioes |
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Author:
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Kunjomana, A G; Dr.Elizabeth, Mathai
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Abstract:
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The physical properties of solid matter are
basically influenced by the existence of lattice defects;
as a result the study of crystal defects has assumed
a central position in solid state physics and materials
science. The study of dislocations ixa single crystals
can yield a great deal of information on the mechanical
properties of materials. In order to secure a full understanding
of the processes taking place in semiconducting
materials, it is important to investigate the microhardness
of these materials-—the most reliable method of
determining the fine structure of crystals, the revelation
of micro—inhomogenities in the distribution of impurities,
the effect of dislocation density on the mechanical
properties of crystals etc. Basically electrical conductivity
in single crystals is a defect controlled phenomenon
and hence detailed investigation of the electrical properties
of these materials is one of the best available
methods for the study of defects in them. In the present
thesis a series of detailed studies carried out in Te—Se
system, Bi2Te3 and In2Te3 crystals using surface topographical,
dislocation and microindentation analysis as well as
electrical measurements are presented |
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Description:
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Department of
Physics, Cochin University of Science and Technology |
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URI:
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http://dyuthi.cusat.ac.in/purl/3611
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Date:
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1992-08-10 |