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| Abstract: | Photothermal deflection technique (PTD) is a non-destructive tool for measuring the temperature distribution in and around a sample, due to various non-radiative decay processes occurring within the material. This tool was used to measure the carrier transport properties of CuInS2 and CuInSe2 thin films. Films with thickness <1 μm were prepared with different Cu/In ratios to vary the electrical properties. The surface recombination velocity was least for Cu-rich films (5×105 cm/s for CuInS2, 1×103 cm/s for CuInSe2), while stoichiometric films exhibited high mobility (0.6 cm2/V s for CuInS2, 32 cm2/V s for CuInSe2) and high minority carrier lifetime (0.35 μs for CuInS2, 12 μs for CuInSe2 |
| Description: | Thin Solid Films 518 (2010) 1767–1773 |
| URI: | http://dyuthi.cusat.ac.in/purl/4712 |
| Files | Size |
|---|---|
| Non-destructive ... l deflection technique.pdf | (1.073Mb) |
| Abstract: | In this work. Sub-micrometre thick CulnSe2 films were prepared using different techniques viz, selenization through chemically deposited Selenium and Sequential Elemental Evaporation. These methods are simpler than co-evaporation technique, which is known to be the most suitable one for CulnSe2 preparation. The films were optimized by varying the composition over a wide range to find optimum properties for device fabrication. Typical absorber layer thickness of today's solar cell ranges from 2-3m. Thinning of the absorber layer is one of the challenges to reduce the processing time and material usage, particularly of Indium. Here we made an attempt to fabricate solar cell with absorber layer of thickness <lmum. Here In2S3 was used as the buffer layer, replacing toxic CdS. |
| Description: | Department of Physics, Cochin University of Science and Technology |
| URI: | http://dyuthi.cusat.ac.in/purl/2515 |
| Files | Size |
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| Dyuthi-T0674.pdf | (9.891Mb) |
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