Young’s modulus of silicon nitride used in scanning force microscope cantilevers

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Young’s modulus of silicon nitride used in scanning force microscope cantilevers

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Title: Young’s modulus of silicon nitride used in scanning force microscope cantilevers
Author: Jacob, Philip; Khan, A; Hess, P
Abstract: The Young’s modulus and Poisson’s ratio of high-quality silicon nitride films with 800 nm thickness, grown on silicon substrates by low-pressure chemical vapor deposition, were determined by measuring the dispersion of laser-induced surface acoustic waves. The Young’s modulus was also measured by mechanical tuning of commercially available silicon nitride cantilevers, manufactured from the same material, using the tapping mode of a scanning force microscope. For this experiment, an expression for the oscillation frequencies of two-media beam systems is derived. Both methods yield a Young’s modulus of 280–290 GPa for amorphous silicon nitride, which is substantially higher than previously reported (E5146 GPa). For Poisson’s ratio, a value of n 50.20 was obtained. These values are relevant for the determination of the spring constant of the cantilever and the effective tip–sample stiffness
URI: http://dyuthi.cusat.ac.in/xmlui/purl/2029
Date: 2004-02-15


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