| dc.contributor.author |
Nibu, A George |
|
| dc.contributor.author |
Vallabhan, C P G |
|
| dc.contributor.author |
Nampoori, V P N |
|
| dc.contributor.author |
Radhakrishnan, P |
|
| dc.date.accessioned |
2011-10-29T04:11:22Z |
|
| dc.date.available |
2011-10-29T04:11:22Z |
|
| dc.date.issued |
2002-01 |
|
| dc.identifier.other |
Opt. Eng. 41(1) 251–254 (January 2002) |
|
| dc.identifier.uri |
http://dyuthi.cusat.ac.in/purl/2411 |
|
| dc.description.abstract |
We discuss an open photoacoustic cell study on sulfer-doped
n-type InP wafer. The thermal diffusivity of the sample is evaluated from
the phase data associated with the photoacoustic signal as a function of
the modulation frequency under heat transmission configuration. Analysis
is made on the basis of the Rosencwaig-Gersho theory and the results
are compared with those from earlier reported photoacoustic studies
of semiconductors. Our investigation clearly indicates that the
instantaneous thermalization process is the major heat diffusion mechanism
responsible for the photoacoustic signal generation in an InP
sample. |
en_US |
| dc.description.sponsorship |
Cochin University of Science and
Technology |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
Society of Photo-Optical Instrumentation Engineers |
en_US |
| dc.subject |
photoacoustic and photothermal science and engineering |
en_US |
| dc.subject |
indium phosphide |
en_US |
| dc.subject |
heat diffusion in semiconductors |
en_US |
| dc.title |
Photoacoustic studies on n-type InP |
en_US |
| dc.type |
Working Paper |
en_US |
| dc.contributor.faculty |
Technology |
en_US |
| dc.identifier.url |
doi:10.1117/1.1419023 |
en_US |