| dc.contributor.author |
Sudha Kartha, C |
|
| dc.contributor.author |
Jayakrishnan, R |
|
| dc.contributor.author |
Vijayakumar, K P |
|
| dc.date.accessioned |
2014-09-23T09:19:12Z |
|
| dc.date.available |
2014-09-23T09:19:12Z |
|
| dc.date.issued |
2011 |
|
| dc.identifier.uri |
http://dyuthi.cusat.ac.in/purl/4724 |
|
| dc.description |
MaterialsScienceinSemiconductorProcessing14(2011)58–61 |
en_US |
| dc.description.abstract |
b-In2S3 thin filmsweredepositedonIndiumTinOxidesubstratesusingtheChemical
SprayPyrolysistechnique.Metalcontactwasdepositedoverthe b-In2S3 thin filmto
formahetero-structureofthetypeITO/b-In2S3/Metal.Theintensityoftwophoto-
luminescenceemissionsfromthe b-In2S3 thin film,centeredat520and690nmcould
be variedbytheapplicationofanexternalbiasvoltagetothishetero-structure.The
emissionscouldbeswitchedonoroffdependinguponthemagnitudeoftheexternal
appliedbiasvoltage.Thusthepresenceoftwoconductingstatesinthishetero-structure
could beidentified.Thetemporalvariationinintensityofthephotoluminescence
emissionwiththeapplicationofthebiasvoltagehasalsobeenstudied.Thecondition
underwhichphotoluminescencequenchingoccurshasbeenrepresentedbyafirst
order differentialequationbetweendiffusionlengthandcarrierconcentration |
en_US |
| dc.description.sponsorship |
CochinUniversityofScienceandTechnology |
en_US |
| dc.language.iso |
en |
en_US |
| dc.publisher |
Elsevier |
en_US |
| dc.subject |
Thin films |
en_US |
| dc.subject |
Chemical SprayPyrolysis |
en_US |
| dc.subject |
Indium sulfide |
en_US |
| dc.subject |
Photoluminescence quenching |
en_US |
| dc.subject |
Voltage dependence |
en_US |
| dc.title |
Bias voltagecontrolledphotoluminescencefrom b-In2S3 thin films |
en_US |
| dc.type |
Article |
en_US |